View PN2907A_599535.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UNISONIC TECHNOLOGIES CO.,LTD. PN2907A
PNP GENERAL PURPOSE AMPLIFIER
DESCRIPTION
This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.
PNP EPITAXIAL SILICON TRANSISTOR
1
TO-92
* Pb-free plating product number: PN2907AL
PIN CONFIGURATION
www..com
PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector
ORDERING INFORMATION Order Number Normal Lead free PN2907A-T92-B PN2907AL-T92-B PN2907A-T92-K PN2907AL-T92-K Package TO-92 TO-92 Packing Tape Box Bulk
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co.,LTD.
1
QW-R201-041.B
PN2907A
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Note 1) (Ta=25C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 800 mA 625 mW Power Dissipation PD 5.0 mW/C Derate above 25C Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Note 3: All voltage (V) and currents (V) are negative polarity for PNP transistors.
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified.)
PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS Ic=0.1mA, VCE=10V Ic=1.0 mA, VCE=10V Ic=10 mA, VCE=10V Ic=150 mA, VCE=10V* Ic=500 mA, VCE=10V* Ic=150mA, IB=15mA Ic=500mA, IB=50mA Ic=150mA, IB=15mA* Ic=500mA, IB=50mA 75 100 100 100 50 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO TEST CONDITIONS IC=10mA, IB=0 IC=10A, IE=0 IE=10A , IC=0 VCB=30V, VEB=0.5V VCE=30V, VBE=0.5V VCB=50V, IE=0 VCB=50V, IE=0, Ta=150C MIN 60 60 5 50 50 0.02 20 TYP MAX UNIT V V V nA nA A A
DC Current Gain
hFE
300 0.4 1.6 1.3 2.6 V V V V MHz pF pF ns ns ns ns ns ns
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage
VCE(sat) VBE(sat)
SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT Ic=50mA, VCE=20V, f=100MHz Output Capacitance Cobo VCB=10V, IE=0, f=100kHz Input Capacitance Cibo VEB=2V, IC=0, f=100kHz SWITCHING CHARACTERISTICS Turn-on Time tON Vcc=30V, Ic=150mA Delay Time tDLY IB1=15mA Rise Time tR Turn-off Time tOFF Vcc=6V, Ic=150mA Storage Time tS IB1=IB2=15mA Fall Time tF * Pulse Test: Pulse Width 300ms, Duty Cycle2.0% Note: All voltages (V) and currents (A) are negative polarity for PNP transistors
200 8 30 45 10 40 100 80 30
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R201-041.B
PN2907A
THERMAL DATA
PARAMETER Thermal Resistance Junction- Ambient Thermal Resistance Junction- Case SYMBOL
PNP EPITAXIAL SILICON TRANSISTOR
JA Jc
RATINGS 200 83.3
UNIT C/W
TEST CIRCUIT
-30V
200 1.0k 0 -16V 50
200ns
Fig. 1 Saturated Turn-On Switching Time Test Circuit
1.5V
-6.0V
NOTE: BVEBO=5.0V 1.0k 0 -30V 50
1k
37
200ns
Fig. 2 Saturated Turn-Off Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R201-041.B
PN2907A
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain vs Collector Current
TYPICAL PULSED CURRENT GAIN, hFE
PNP EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs Collector Current
COLLECTOR EMITTER VOLTAGE, VCESAT (V)
500 400 300 200 100 0 0.1 0.3 1 3 10 30 25 -40 125
VCE =5V
1 0.8 0.6 0.4 0.2 0
=10
25
125
-40 100 500
100
300
1
10
COLLECTOR CURRENT, IC (mA)
COLLECTOR CURRENT, IC (mA)
Base-Emitter Saturation Voltage vs Collector Current 1 -40 0.8 0.6 0.4 0.2 0 1 10 100 =10 500 25 125
BASE EMITTER ON VOLTAGE, VBEON (V) BASE EMITTER VOLTAGE, VBESAT (V)
Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 1 VCE=5V 10 25 -40
25 125
COLLECTOR CURRENT, IC (mA)
COLLECTOR CURRENT, IC (mA)
COLLECTOR CURRENT, ICBO (nA)
100 10 1 0.1 0.01
Collector-Cutoff Current vs Ambient Temperature
CAPACITANCE (pF)
Input and Output Capacitance vs Reverse Bias Voltage 20 16 12 8 4 0 -0.1 -1 Cob Cib
VCB=35V
25
50
75
100
125
-10
-50
AMBIENT TEMP ERATURE, Ta ()
REVERSE BIAS VOLTAGE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R201-041.B
PN2907A
TYPICAL CHARACTERISTICS(cont.)
Switching Times vs Collector Current 250 200
TIME (nS)
PNP EPITAXIAL SILICON TRANSISTOR
IC IB1 =IB2 = 10 VCC=15V
TIME (nS)
500 400 ts 300 200 100 0
Turn On and Turn Off Times vs Collector Current IC IB1=I B2= 10
VCC=15V
150 100 tR 50 0 10 tDLY 100 tF
tOFF tON 10 100 COLLECTOR CURRENT, I C (mA) 1000
1000
COLLECTOR CURRENT, I C (mA)
Rise Time vs Collector and Turn On Base Currents tR =15V
Power Dissipation vs Ambient Temperature
20 10 5 30ns 2 1 10 60ns 100 COLLECTOR CURRENT, I C (mA) 500
POWER DISSIPATION, PD (W)
TURN ON BASE CURRENT , IBf (mA)
50
1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 TEMPERATURE, ()
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
QW-R201-041.B
PN2907A
RELATIVE TO VALUES AT IC=10mA, CHAR
Common Emitter Characteristics 5 2 1 0.5 0.2 0.1 -1 -2 -5 -10 hoe hre hfe hie VCE= -10V Ta=25 -20 -50
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS FOR COMMON EMITTER (f=1kHz)
RELATIVE TO VALUES AT VCE=10V, CHAR
Common Emitter Characteristics 1.3 1.2 1.1 1 hie 0.9 hfe 0.8 -4 -8 -12 -16 -20 IC= -10mA Ta=25 hre and hoe hre hie hfe hoe
COLLECTOR CURRENT, IC (mA)
COLLECTOR VOLTAGE, VCE (V)
Common Emitter Characteristics
RELATIVE TO VALUES AT T A=25, CHAR
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5
I C=-10mA VCE=-10V hoe hre hie hfe -40 -20 0 20 40
hfe hie hre hoe
60
80
100
AMBIENT TEMPERATURE, Ta ()
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6
QW-R201-041.B

▲Up To Search▲

Price & Availability of PN2907A

	To Download PN2907A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .